Thematic Center for Quantum Photonics

Quantum photonic devices—including single-photon sources and single-photon detectors—combined with quantum photonic chips for controlling photons are critical devices and technologies for quantum communications and photonic quantum computations. The key technologies proposed to be developed in this project include: (1) High-efficiency single-photon sources operating at communication wavelengths, (2) Infrared superconducting single-photon detectors, and(3) Quantum photonic chips. The project will utilize optical cavity design and theoretical simulations to determine the optimal structures, aiming to enhance the efficiency of single-photon sources and detectors, achieve greater photon indistinguishability, improve the fidelity of entangled photon pairs, and optimize both the sensitivity and response speed of the detectors. Additionally, the project seeks to develop quantum optoelectronic chip technology by integrating single-photon sources with detectors to enable the control and readout of photonic quantum states. Furthermore, through new materials research (including SiO₂/SiN, hBN, and SiC), the project aims to develop single-photon sources that can be operating at room temperature in the telecom wavelength bands.

Two-dimensional materials have extensive applications in next-generation electronic and optoelectronic devices. However, they also face numerous challenges. Our team has developed high-performance two-dimensional transistor technology, including devices that utilize few-layer MoS₂ as the channel material. With shorter channel widths and a passivation layer, these devices can achieve a drain current of 100 μA/μm and a carrier mobility exceeding 100 cm²·V⁻¹·s⁻¹. Based on our expertise in device technology, this project will further develop WSe₂ transistor technology. Due to the significant environmental impact on WSe₂ materials, device performance still needs improvement. By material quality improvement and process optimization, the project aims to achieve WSe₂ transistors with a field-effect mobility of 10 cm²·V⁻¹·s⁻¹. For optoelectronics, our team has developed a large-area multilayer MoS₂ thin film growth technique to be used as a light-absorbing layer, combined with single-layer graphene as the carrier transport layer. This approach has enabled photodetectors with high responsivity and short response times. This project also aims at integrating two-dimensional materials with traditional semiconductors to develop heterojunction photodetectors. By leveraging the short carrier transit times characteristic of two-dimensional materials alongside the broad range of bandgaps available in conventional semiconductors, we aim to achieve long-wavelength photodetection at room temperature. Furthermore, due to their ultrafast carrier response and atomic-scale thickness, two-dimensional materials are ideal candidates for high-speed optical modulation devices integrated into photonic chips. This project intends to combine two-dimensional materials with miniature optical nanocavities to enable exciton–cavity coupling. By modulating the cavity emission intensity via an external voltage, our goal is to realize high-speed optical modulators based on two-dimensional semiconductors, which can be applied in future integrated photonic and quantum optoelectronic chips.